The iv characteristics, infrared absorption spectra, and photoresponse spectra of superlattices are used to characterize multiple quantum well structure properties in unipolar devices. Spatial confinement effects on type ii quantum well. Physics and device applications ii, volume 66 1st edition. Intersubband transitions in high indium content ingaas. Dasc arcc institute of information technology, beliaghata, kolkata 700015, india basansol engg. Download it once and read it on your kindle device, pc, phones or tablets. Binding energy of a screened donor in a cylindrical quantum wire under applied magnetic fields 65 where vd z,a0 is the laser dressed potential. Laser field effects on the interband transitions in differently shaped quantum wells 285 eg 1. Longwavelength quantumwell infrared detectors based on.
The optical transition rates in quantum wells can be calculated using fermis golden rule. Intersubband optical transitions at short wavelengths in straincompensated in0. We examine the intersubband transitions in this system and the selection rules are obtained for a light polarization vector parallel or perpendicular to the growth direction. The semiconductor physics group of the institute of physics. Optical properties of solids lm herz trinity term 2014 recommended textbooks m fox, optical properties of solids, oxford university press py yu and m cardona, fundamentals of semiconductors, springer c kittel, introduction to solid state physics, wiley b saleh, m. We find that for square arrays, the classical groundstate is an ising antiferroelectret afe, while the quantum groundstate undergoes a transition from a uniform state to an afe. Intersubband transitions are observed in inganasgaas quantum wells at wavelengths around 10. However, in doped quantum wells, the thz radiation can excite an intersubband polarization directly, leading to a channel for sideband generation that has not been previously. We study the creation of highefficiency controlled population transfer in intersubband transitions of semiconductor quantum wells.
Interband transitions of quantum wells and device structures containing gan, as and ga, inn, as. In quantum wells this transition is forbidden in the conduction band subbands. Many of the papers presented in quantum well intersubband transition physics and devices are on the basic linear intersubband transition processes, detector physics and detector application, reflecting the current state of understanding and detector applications, where highly uniform, large focal plane arrays have been demonstrated. Exciton absorption in semiconductor quantum wells driven. The operation principles and characteristics as an absorption saturation type device are described. A read is counted each time someone views a publication summary such as the title, abstract, and list of authors, clicks on a figure, or views or downloads the fulltext. Intersubband transitions in semiconductor quantum wells are studied using a density matrix theory that goes beyond the hartreefock approximation by including the full second order electronelectron scattering terms in the polarization equation for the. Zalamai2 1technical university of moldova, stefan cel mare avenue168, chisinau, md2004 republic of moldova 2institute of applied physics of the academy of sciences of moldova. Chapter 10 optical transitions in semiconductor quantum wells. Tradeoffs between achieving a high transition energy and a large oscillator strength of the two highestenergy. Even though the spectral features remain qualitatively similar. We numerically solve the effective nonlinear bloch equations. Interband optical transitions in the region of exciton resonances in in 0. Given that intersubband transitions isbt in quantum wells qws are one of the important ultrafast phenomena, a numerical study of intersubband transition isbt properties in cdsznsebete.
Optical properties of solids lm herz trinity term 2014. Intersubband transitions in quantum wells how is intersubband transitions in quantum wells abbreviated. Ingaasalgaas quantum wells qws grown on gaas substrates. We assume that only the two lower energy subbands, n 0 for the lowest subband and n 1 for the excited subband, contribute to the system dynamics. Photodetectors based on intersubband transitions using iii. In this paper, our aim is to understand the correlation.
Pdf electronic properties of intersubband transition in. Teich, fundamentals of photonics, wiley a yariv, quantum electronics, wiley. Nearinfrared intersubband transitions in ingaas alas. Ninth international conference on intersubband transitions in quantum wells selection rules for intersubband transitions in valley split 001sige quantum wells m. An important numerical method for solving the problem of boundtocontinuum transitions. Short wavelength intersubband transitions in ingaasalgaas. Tradeoffs between achieving a high transition energy and a large oscillator strength of the two highestenergy intersubband transitions using our straincompensation approach. Temperature dependence of intersubband transitions in. Phonon assisted intersubband transitions in step quantum.
Experimentally, we performed polarizationresolved infrared absorption spectroscopy to measure intersubband absorption peak frequencies and linewidths as functions of temperature from 4 k to room temperature and quantum well width from a few. The nonlinear optical response of intersubband transitions in quantum wells is rigorously derived and the implications of their resonantlyenhanced nature are examined. Nearinfrared intersubband transitions in ingaasalas. Pdf conduction band intersubband transitions in gesige. It is shown that very high current responsivities and high gain are obtained. The transition energies are correlated with interband transition energies measured in the near infrared.
Intersubband transitions in quantum structures kindle edition by paiella, roberto. We have modeled the transitions using eightband kp theory combined with semiconductor bloch equations, including the main manybody effects. Ultrashort electromagnetic pulse control of intersubband. Intersubband transitions in quantum wells springerlink. It is shown that the gan barrier thickness t b is designed as 25 nm and the in composition is optimized to be 15% in ingan wells for both types. It is found that gain increases drastically when approaching detector voltages close to 8. Use features like bookmarks, note taking and highlighting while reading intersubband transitions in quantum structures. It has also been shown that different resonator shapes may lead to different rabi splittings, though this has not yet been well explained. Intersubband resonance, quantum wells, nonparabolicity, manybody e. The well width dependence of i intersubband transition energies in both in,ga,asalo.
Intersubband transition in ganingan multiple quantum wells. The nonperturbative theory for the nonlinear optical interaction of quantum well intersubband transitions is developed. Pdf quantum wells with multiple intersubband transitions. Exciton absorption in semiconductor quantum wells driven by a strong intersubband pump field ansheng liu and c. E in the range of 128mev, e 14 in the range of 182mev, e 23 in the range of 142mev, and e. We give emphasis to the case of interaction of the semiconductor quantum well with electromagnetic pulses with a duration of few cycles and even a single cycle. This important step could be realized in 1994 by faist et al at bell labs 6. Ultrafast alloptical switches based on intersubband. Box 12211, research triangle park, north carolina 277092211. As a first step towards realizing such a thz source, we have conducted a systematic study of optical transitions in inas alsb quantum wells for a wide range of well widths. Electronic tuning of intersubband transition of inverted. Because of very fast intraband relaxation in conduction band, we can obtain very fast response of around 1ps. The potential energy profile in semiconductor heterostructures can now be controlled in a fascinating way that could barely be dreamed of twenty years ago 1.
Quantum wells with multiple intersubband transitions. Phonon assisted intersubband transitions in step quantum well structures h. Intersubband transitions in semiconductor quantum wells qws have been the subject of extensive research for the past several decades. Quantum well intersubband transition physics and devices. Designs for engineering intersubband transitions isbt in ganaln quantum wells near communication wavelengths 1. Collective excitations in inas quantum well intersubband. Good agreement of the intersubband transition energies to a single. Sinclair2, eric shaner1 and igal brener1,2 1center for integrated nanotechnologies, sandia national laboratories, p. Intersubband transitions in quantum wells listed as itqw. Pdf ac stark splitting and quantum interference with. Ultrafast alloptical modulation by nearinfrared intersubband transition in ndoped ingaasalassb quantum wells a. The system under study is a symmetric double semiconductor quantum well. Assuming the photon density at the location of the quantum well to be np, the expressions for the rate of stimulated absorption r s,p, units.
The sample can be designed to have desired transition energies, i. The fermi level is below the n 1 subband minimum, so the excited subband is initially empty. College, asansol, burdwan, west bengal 7305, india. Ultrafast alloptical switch based on intersubband transitions in ingaasalasalassb quantum well is described. Manybody effects on intersubband resonances in narrow. Physics and device applications, volume 62 1st edition. However in quantum dots the vertical incident optical transition is quite strong. When dealing with interband optical transitions, additional features related to electronhole interactions see for instance exciton descriptions in this book are coming into play and the oneelectron. The proceedings of the ninth international conference on. Intersubband transitions in inasalsb quantum wells. This thesis is a theoretical and experimental investigation of the intersubband transitions in quantum well structures.
The wide conduction band offset such as ganalgan heterostructs has extended the transitions into near infrared region. Electrodynamic modeling of strong coupling between a. Intersubband transitions in quantum structures, paiella. The ninth international conference on intersubband transitions in quantum wells low wood hotel, ambleside, cumbria, u.
We have studied intersubband transitions in inasalsb quantum wells experimentally and theoretically. Haddad department of electrical engineering and computer science, the university of michigan, ann arbor, michigan 481092122 michael a. Electronic tuning of intersubband transition of inverted coreshell cylindrical quantum wire for novel lasing performance arpan deyasia, s bhattacharyyab and n. Purchase intersubband transitions in quantum wells. Midinfrared intersubband absorption from pge quantum wells with si0. The resonance energy redshifts with increasing temperature from 10 to 300 k, and the amount of redshift increases with decreasing well width. Introduction quantumwell qw intersubband resonances isbrs are known to be dressed up by collective excitations 1,2, as a consequence of the coulomb interaction among the electrons con. Similarly, inaslaisb quantum wells can be used for intersubbandpumped longwave generation. Chapter 10 optical transitions in semiconductor quantum. Interaction between metamaterial resonators and inter. Ruiztijerina6, celal yelgel6, vladimir falko6, kristian thygesen3, rainer hillenbrand5,7, frank h. Ning nasa ames research center, ms n2291, moffett field, ca 94035 department of electrical engineering, arizona state university, tempe, az. Specifically it is found that the lack of spatial confinement to the qw in the. The dynamics of intersubband transitions in a multiple quantum well system consisting of gaas coupled quantum wells separated by an al x ga 1.